NDP References for 1995 - 1996

1996 Literature

Influence of energetic ions on grafting to polyethylene, D. Fink, R. Klett, M. Muller, H. Omichi, and F. Hosoi, J. Vacik, V. Hnatowicz, and L. T. Chadderton, Applied Physics A: Materials Science and Processing, Vol. 63(5) Pages 441-446 (1996)

Neutron depth profiling applications at The University of Texas research reactor, K. Ünlü and B. W. Wehring, Journal of Radioanalytical and Nuclear Chemistry, Volume 217, Number 2, Pages 273 – 278 (1996)

On the redistribution of 6Li + ions implanted into polypropylene foils, Fink, M. Behar, J. Kaschny, R. Klette, L. T. Chadderton, V. Hnatowicz, J. Vacik, and L. Wang, D. Applied Physics A: Materials Science & Processing, Volume 62, Number 4, April (1996) Pages 359-367

Characterization of aged latent ion tracks in polyimide, D. Fink, R. Klett, Xuanwen Hu, M. Müller, G. Schiwietz, G. Xiao, L. T. Chadderton, L. Wang, C. Mathis, V. Hnatowicz and J. Vacik, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 116, Issues 1-4, 2 August (1996), Pages 66-71

Doping of 20 MeV fullerene ion tracks in polyimide, D. Fink, J. Vacik, R. Klett, L. T. Chadderton and V. Hnatowicz, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 119, Issue 4, 1 December (1996), Pages 591-595

Bonding of dopants to irradiated polymers, D. Fink, R. Klett, V. Hnatowicz, J. Vacik, C. Mathis, H. Omichi, F. Hosoi, L. T. Chadderton and L. Wang, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 116, Issues 1-4, 2 August (1996), Pages 434-439

Boron Analysis in Synthetic Diamond Films Using Cold Neutron Depth Profiling, Lamaze, G.P., and Downing, R.G., Semiconductor Characterization: Present Status & Future Needs, Eds. W.M. Bullis, D.G. Seiler, and A.C. Diebold, American Institute of Physics, Woodbury, NY (1996) 351

Nondestructive Determination of Boron Doses in Semiconductor Materials Using Neutron Depth Profiling, Unlu, K.; Saglam, M.; Wehring, B.W.; Hossain, T.Z.; Custodio, E.; and Lowell, J.K.; Proceedings of the 11th International Conference on Ion Implantation Technology, 16-21 June (1996), Pages 575-578

Precipitation of dissolved alkali salts and fullerenes on surfaces of doped porous matter, D. Fink, R. Klett, C. Mathis, J. Vacik, V. Hnatowicz, and L. T. Chadderton, Applied Physics A, March (1996), Volume 62, Issue 3, pages 191-195

Ion Implantation into Fullerene, D. Fink, J. Krauser, D. Nagengast, M. Behar, J. Kaschny, P. Grande, V. Hnatowicz, J. Vacik & L. Palmetshofer, Fullerene Science and Technology, Volume 4, Issue 3, (1996) pages 535-552

DOI:10.1080/10641229608001569

Accelerator-based fullerene depth profiling, D. Fink, M. Müller, R. Klett, V. Hnatowicz, J.Vacik, C. Mathis, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 114, Issues 3–4, 1 July 1996, Pages 394-396

https://doi.org/10.1016/0168-583X(96)00219-4

The Development of Standard Reference Material 2137 - A Boron Implant in Silicon Standard for Secondary Ion Mass Spectrometry, Simons, D.S., Chi, P.H., Downing, R.G., and Lamaze, G.P., Semiconductor Characterization: Present Status & Future Needs, Eds. W.M. Bullis, D.G. Seiler, and A.C. Diebold, American Institute of Physics, Woodbury, NY (1996) 382

Nondestructive Characterization of Semiconductor Materials Using Neutron Depth Profiling, Downing, R.G. and Lamaze, G.P., Semiconductor Characterization: Present Status & Future Needs, Eds. W.M. Bullis, D.G. Seiler, and A.C. Diebold, American Institute of Physics, Woodbury, NY (1996) 346

Hydrogen/oxygen radio-frequency plasma processing of LiNbO3, Hana Turcicova, Jiri Vacik, Jarmila Cervena, Vladimir Zelezny, Proc. SPIE 2775, Specification, Production, and Testing of Optical Components and Systems, 566, 9 pages, August 19, (1996)

Doping of Cn + (N = 1, 3, 5, 8) cluster ion tracks in polyimide, D. Fink, R. Klett, W. H. Chung, R. Grünwald, M. Döbeli, F. Ames, L. T. Chadderton, J. Vacik & V. Hnatowicz, Radiation Effects and Defects in Solids, 140:1, pages 3-20 (1996)

DOI: 10.1080/10420159608212936(link)

1995 Literature

Thermal neutron depth profiling, Vacik, J., Cervena, J., Hnatowicz, V., Hoffmann, J., Havranek, V., & Fink, D. Acta Polytechnica, 35(4), 151-153. (1995)

https://inis.iaea.org/search/search.aspx?orig_q=RN:28003206

Measurement of the ¹⁷O(p,d)¹⁴N Cross Section at Stellar Energies, Blackman, J.C., Champagne, H.E., Hofstrer, M.A., Smith, M.S., Downing, R.G., and Lamaze, G.P., Physical Review Letters 74(14) (1995) 2642-2645

Doping of ion implanted polyethylene with metallocarborane, V. Hnatowicz, J. Vacík, J. ervená, V. vor ík, V. Rybka, V. Popok, D. Fink and R. Klett, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 105, Issues 1-4, 2 November (1995) Pages 241-244

Depth profiles of fullerene in ion irradiated polyimide, D. Fink, R. Klett, C. Mathis, J. Vacik, V. Hnatowicz and L. T. Chadderton, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 100, Issue 1, 1 May 1(995) Pages 69-79

Doping of nuclear tracks with fullerene solution, D. Fink, R. Klett, C. Mathis, J. Vacik and V. Hnatowicz, Radiation Measurements, Volume 25, Issues 1-4, (1995) Pages 85-88

Three-dimensional implantation distribution of lithium implanted into pyrographite, as revealed by solid state tomography in combination with neutron depth profiling, D. Fink, M. Müller, R. Klett, J. Vacik, V. Hnatowicz and J. Cervena, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 103, Issue 4, 1 December (1995) Pages 423-428

Modeling detector response for neutron depth profiling, K. J. Coakley, R. G. Downing, G. P. Lamaze, H. C. Hofsäss, J. Biegel and C. Ronning, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 366, Issue 1, 21 November (1995) Pages 137-144

Conduction processes in boron- and nitrogen-doped diamond-like carbon films prepared by mass-separated ion beam deposition, C. Ronning, U. Griesmeier, M. Gross, H. C. Hofsäss, R. G. Downing and G. P. Lamaze, Diamond and Related Materials, Volume 4, Issues 5-6, 1 May (1995), Pages 666-672

Near Surface Profiling of Semiconductor Materials using Neutron Depth Profiling, Downing, R.G., and Lamaze, G.P., Supercond. Sci. Technol., 10 (1995) 1423-1431

Depth Distribution of Boron and Radiation Defects in Silicon Dual Implanted with B+ and N+ Ions, Odzhaev, V.B., Popok, V.N., Červená, J., Hnatowicz, V., Kvítek, J. and Vacík, J. (1995), phys. stat. sol. (a), 147: 91-97.

https://doi.org/10.1002/pssa.2211470110