Embedded Files
1989 Literature
1989 Literature
Range profiles and thermal release of 3He implanted into various nickel-based amorphous alloys, Kenan Unlü and Dietrich H. Vincent, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 299, Issues 1-3, 20 December 1990, Pages 606-609
Light impurities in oxidizing metal foils, D. Fink, K. Tjan, M. F. Da Silva, and J. C. Soarez, Materials Science and Engineering A, Volume 125, Issue 2, 1 June 1990, Pages 235-240
Unique Ion Beam Scattering Technique on Depth Profile Determination, Fink, D., and Fichtner, P. F. P. (1990) Radiation Effects, and Defects in Solids 114, 337-341
Energy, Fluence, and Temperature Dependence of MeV Nitrogen Implantation Profiles in Steel, Fink, D., Muller, M., Wang, L., Siegel, J., Vredenberg, A., Martan, J., and Fahrner, W. (1990)., Radiation Effects and Defects in Solids 115, 121-134
On the Thermal Mobility of Lithium in Metals, and Semiconductors, Fink, D., Tjan, K., and Wang, L. (1990), Radiation Effects and Defects in Solids 114, 21-50
On the Thermal Annealing Behavior of Boron in Solids, Fink, D., and Wang, L. (1990). Radiation Effects and Defects in Solids 114, 343-371
30 keV to 2 MeV Boron Implantation Profiles in Solids, Fink, D., Wang, L., Biersack, J. P., and Jahnel, F. (1990). Radiation Effects and Defects in Solids 115, 93-112
Neutron Depth Profiling by Coincidence Spectrometry, Parikh, N.R., Frey, E.C., Hofsäss, Swanson, M.L., Downing, R.G., Hossain, T.Z., and Chu, W.K., Nucl. Instrum. Meth. B45 (1990) 70-74
Depth Profiling of Silicon by Nuclear Activation Methods, Alfassi, Z. B., and Yang, M. H. (1990) In Activation Analysis, Z. B. Alfassi, ed., Boca Raton, FL, CRC Press, pp. 579-606
Measurement and Control of the Boron and Phosphorus Concentration in LPCVD Borophosphosilicate Glass (BPSG), Zeitzoff, P.M., Hossain, T.Z., Boisvert, D., and Downing, R.G., J. Electrochem. Soc., 137(12) (1990) 3917-3922
Neutron Depth Profiling of Boron Distributions, Lavine, J.P., Hossain, T.Z., Downing, R.G., Carducci, T.R., Mehra, M., and Cumbo, M.J., Proc. Electrochem. Soc. 90 (7) (1990) 1041-1051
The Measurement of Boron at Silicon Wafer Surfaces by Neutron Depth Profiling, Downing, R.G., Lavine, J.P., Hossain, T.Z., Russell, J.B., and Zenner, G. P., J. Appl. Phys. 67 (8) (1990) 3652-3654
DOI: http://dx.doi.org/10.1557/PROC-166-323
Neutron Depth Profiling of Boron Implanted Semiconductors, Bowman, R.C., Jr., Knudsen, J.F., and Downing, R.G., Materials Res. Soc. Symp. Proc., 166 (1990) 331-336
DOI: http://dx.doi.org/10.1557/PROC-166-331
Standard Reference Materials: Glasses for Microanalysis: SRM's 1871-1875, R.B. Marinenko, D. H. Blackburn, and J. B. Bodkin, NIST Special Publication 260-112. US. Dept. of Commerce, NIST,US Government Printing Office, Washington, D.C. issued February 1990 pp. 60.
1990 Literature
1990 Literature
Surface precipitation of natural and ion-implanted lithium and boron in metals, D. Fink, Materials Science and Engineering A, Volume 115, 1 August 1989, Pages 89-95
High energy Li implanted profiles in silicon, M. Behar, M. Weiser, S. Kalbitzer, D. Fink, and P. L. Grande, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 39, Issues 1-4, 2 March 1989, Pages 22-25
Advances in Nuclear Analysis Methods, Emile A. Schweikert, Analyst, Volume 114, pp 269-274 March (1989)
Anomalous depth profiles of light ions and noble gases implanted into polymers, R. B. Guimarães, L. Amaral, M. Behar, F. C. Zawislak, and D. Fink, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 39, Issues 1-4, 2 March 1989, Pages 800-804
Depth distributions of megaelectronvolt 14N implanted into various solids at elevated fluences, D. Fink, J. P. Biersack, M. Müller and L. H. WangV. K. Cheng, R. Kassing, K. Masseli, M. Weiser and S. Kalbitzer, Materials Science and Engineering B, Volume 2, Issues 1-3, February 1989, Pages 49-54
Lithium Implantation Profiles in Metals, and Semiconductors, Fink, D., Tjan, K., Biersack, J. P., Wang, L., and Yunru, M. (1989). Radiation Effects and Defects in Solids 108, 27 -44
Nitridation-induced surface donor layer in silicon, A. T. Wu, V. Murali, N. Cox, M. R. Frost, B. Triplett, and T. Y. Chan, Appl. Phys. Lett. 55, pp. 1665-1667 (1989)
http://dx.doi.org/10.1063/1.102230
Large Angle Coincidence Spectrometry for Neutron Depth Profiling, Chu, W. K. (1989). Radiation Effects and Defects in Solids 108, 125-126
SIMS and NDP Studies of SiO2;Si3N4/SiO2/Si Structures, Banerjee, I., Frost, M., Davies, P., Cox, J.N., Downing, R.G., Proc. SIMS VII Conf., Monterey, CA, September 3-8, 1989, A. Benninghoven, C.A. Evans, K.D. McKeegan, H.A. Storms, and H.W. Werner, eds. John Wiley and Sons, Chichester (1990) 235-238
Neutron Depth Profiles of Boron Implanted Semiconductors, Robert C. Bowman Jr., John F. Knudsen and R. Gregory Downing, MRS Proceedings, 166, pages 331-336 (1989)
doi:10.1557/PROC-166-331
Page updated
Google Sites
Report abuse