Embedded Files
1988 Literature
1988 Literature
NDP (Neutron Depth Profiling) Evaluations of Boron-Implanted Compound Semiconductors, Robert C Bowman (Jr), John F. Knudsen, R. G. Downing, Defense Technical Information Center, 93 pages (1988)
DOI: http://dx.doi.org/10.1557/PROC-126-89
Distribution of Boron Atoms in Ion Implanted Compound Semiconductors, R.C. Bowman, Jr., J. F. Knudsen, R. G. Downing, and R. E. Dremer, MRS Proceedings Vol 126:89 4 pages (1988)
A model for the detector response function in neutron depth profiling, Myung C. Lee, K. Verghese and R. P. Gardner, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 31, Issue 4, 1 June 1988, Pages 567-575
Implanted boron profiles in silicon, M. Behar, M. Weiser S. Kalbitzer, D. Fink, and F. L. Grande, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 34, Issue 3, September 1988, Pages 316-320
Reconstruction of submicron size spatial distributions of implanted particles in solids by computer tomography, M. Müller and D. Fink, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 34, Issue 2, August 1988, Pages 162-165
Non-regular depth profiles of light ions implanted into organic polymer films, D. Fink, M. Müller, U. Stettner, M. Behar, P. F. P. Fichtner, F. C. Zawislak, and S. Koul, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 32, Issues 1-4, 2 May 1988, Pages 150-154
Chu, W. K., and Wu, D. T. (1988). Scattering Recoil Coincidence Spectrometry, Nuclear Instruments and Methods B35, 518-521.
Fink, D. (1988). Helium Implantation, and Thermal Annealing Behaviour, Radiation Effects 106, 231-264.
Fink, D., Biersack, J. P., Kranz, H., De Souza, J., Behar, M., and Zawislak, F. C. (1988). Tilted Angle Ion Implantation, Radiation Effects 106, 165-181.
Grasserbauer, M. (1988). Critical Evaluation of Calibration Procedures for Distributions Analysis of Dopant Elements in Silicon, and Gallium Arsenides, International Union of Pure and Applied Chemistry 60(3), 437-444.
Guimardes, R. B., Amaral, L., Behar, M., Fichtner, P. F. P., Zawislak, F. C., and Fink, D. (1988). Implanted Boron Depth Profiles in the AZ111 Photoresist, Journal of Applied Physics 63(6), 2083-2085.
Simons, D.S., Chi, P.H., Downing, R.G., Ehrstein, J.R., and Knudsen, J.F., “Progress Toward a Semiconductor Depth-Profiling Standard,” Secondary Ion Mass Spectrometry SIMS VI, John Wiley & Sons, Ltd., London, UK (1988)
Jamieson, D.N., Bowman, R.C., Adams, P.M., Knudsen, J.F., and Downing, R.G., “Study of Boron Implantation in CdTe,” in Fundamentals of Beam-solid Interactions and Transient Thermal Processing, M.J. Aziz, L.E. Rehn, and B. Stritzker, Eds., 101 (1988) 299-304
DOI: http://dx.doi.org/10.1557/PROC-100-299
Downing, R. G., "Neutron Depth Profiling: Current Developments of the Technique in the United States." In Industrial Radiation and Radioisotopes Measurement Applications 56(3) I.O. Macke, ed., Pinehurst, NC, American Nuclear Society, pp. 15-16 (1988)
Use of Rutherford Backscattering and Optical Spectroscopy to Study Boron Implantation in Cadmium Telluride, D. N. Jamieson, R. C. Bowman, Jr., P. M. Adams, J. F. Knudsen, and R. G. Downing, report SD-TR-88-90, Accession No. ADA200463 (1988) pages 21
1987 Literature
1987 Literature
Riley, J. E., Jr. (1987). The Effects of Lithium Isotopic Anomalies on Lithium Niobate, Ferroelectrics 75, 59-62.
Determination of boron by the neutron depth profile (NDP) technique for VLSI processing application, T. Z. Hossain and P. M. Zeitzoff, Journal of Radioanalytical and Nuclear Chemistry, Vol. 113, No. 2,(1987) pages. 379-382
Maki, J. T., Vincent, D. H., and Fleming, R. F. (1987). Migration, and Release of 3He Implanted in Single-Crystal Nickel, In American Nuclear Society-Material Characterization Using Neutron Depth Profiling 55, I. 0. Macke, ed., Los Angeles, CA,American Nuclear Society, pp. 214.
Parikh, N. R., Chu, W. K., Wehring, B. W., and Miller, G. D. (1987). Boron-10 Distribution in Silicon, TiSi2 , and SiO2 Using Neutron Depth Profiling, In American Nuclear Society-Material Characterization Using Neutron Depth Profiling 55, I.0. Macke, ed., Los Angeles, CA, American Nuclear Society, pp. 211-212.
J. N. Cox, R. Hsu, P. J. McGregor, and R. G. Downing, NDP and FTIR Studies of Borophosphosilicate CVD Thin-Film Glasses 1, American Nuclear Society, Los Angeles, CA (1987) pp. 207-209.
Fink, D., Biersack, J. P., and Stadele, M. (1987). Range Profiles of Helium in Solids, Radiation Effects 104, 1-42.
Jamieson, D.N., Bowman, R.C., Adams, P.M., Knudsen, J.F., and Downing, R.G., “Use of Rutherford Backscattering and Optical Spectroscopy to Study Boron Implantation in CdTe,” Proceedings of the Materials Research Society Symposium, 90 (1987)
Bowman, R.C., Jr., Marks, J., Downing, R.G., Knudsen, J.F., and To, G.A., “Effects of Boron Implantation on Silicon Dioxide Passivated HgCdTe,” Proceedings of the Materials Research Society Symposium, 90 (1987) 279
DOI: http://dx.doi.org/10.1557/PROC-90-279
Riley, J.E., Downing, R.G., and Fleming, R.F., “Neutron Depth Profiling of Lithium in Lithium Niobate,” Trans. Am. Nuc. Soc. 55 (1987) 214-215
Bowman, R.C., Jr., Downing, R.G., and Knudsen, J.F., “NDP Evaluations of Boron Implanted Compound Semiconductors,” Trans. Am. Nuc. Soc. 55 (1987) 212-214
Knudsen, J.F., Downing, R.G., and Simons, D.S., “NDP, SIMS, and Modeling of Boron Implantation Profiles in Silicon,” Trans. Am. Nuc. Soc. 55 (1987) 210-211
Losee, D.L., Hossain, T.Z., Lavine, J.P., and Downing, R.G., “Neutron Depth Profiles of ion-Implanted Boron in Polymeric Thin Films,” Trans. Am. Nuc. Soc. 55 (1987) 209-210
Cox, J.N., Hsu, R., McGregor, P.J., and Downing, R.G., “NDP and FTIR Studies of Borophosphosilicate CVD Thin-Film Glasses,” Trans. Am. Nuc. Soc. 55 (1987) 207-209
Riley, J.E., and Downing, R.G., “Quantitative Determination of Boron in Semiconductors Using Neutron Depth Profiling,” Trans. Am. Nuc. Soc. 55 (1987) 207
Bowman, R.C., Jr., Marks, J., Downing, R.G., and Knudsen, J.F., “Effects of Boron Implantation on Silicon Dioxide Passivated HgCdTe,” Mat. Res. Soc. Symp. 90 (1987) 279-286
Downing, R. G., Maki, J. T., and Fleming, R. F., Analytical Applications of Neutron Depth Profiling, Journal of Radioanalytical and Nuclear Chemistry, Articles 112(1) pp 33-46 (1987)
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