NDP References for 1985 - 1986

1986 Literature

Deconvolution of neutron depth profiling spectra, John T. Maki, Ronald F. Fleming and Dietrich H. Vincent, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 17, Issue 2, September 1986, Pages 147-155

High resolution SIMS and neutron depth profiling of boron through oxide-silicon interfaces, W Vandervorst, Shepherd, F.R., and Downing, R.G., J Vac Sci Technol, A3, (1985) Pages 1318-1312

Implantation profiles of Li in metals, K. Tjan, D. Fink, J. P. Biersack and M. Städele, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 15, Issues 1-6, 1 April 1986, Pages 54-57

Range profiles of ions in double-layer structures, D. Fink, J. P. Biersack, M. Städele, K. Tjan, M. Behar, P. F. P. Fichtner, C. A. Olivieri, J. P. De Souza, and F. C. Zawislak, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 15, Issues 1-6, 1 April 1986, Pages 71-74,

1–3 MeV alpha and triton stopping powers in LiF and Li alloys, J. P. Biersack, D. Fink, W. Miekeley, and K. Tjan, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 15, Issues 1-6, 1 April 1986, Pages 96-100

Variability in pottery analysis, J. R. Bird, P. Duerden, E. Clayton, D. J. Wilson, and D. Fink, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 15, Issues 1-6, 1 April 1986, Pages 651-653

Background reduction in light element depth profiling by a coincidence technique, D. Fink, J. P. Biersack, C. Stumpff, and S. Schlosser, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 15, Issues 1-6, 1 April 1986, Pages 740-743,

Implantation on Silicon Dioxide Passivated HgCdTe, R. C. Bowman, Jr, J. Marks, R. G. Downing, J. F. Knudsen and G. A. To (1986). Effects of Boron MRS Proceedings, 90, pages 279-286. doi:10.1557/PROC-90-279

Studies of Boron Implantation Through Photochemically Deposited SiO2 Films on Hg1-xCdxTe, Bowman, Jr., R.C., Jr., Robertson, R.E., Knudsen, J.F., and Downing, R.G., Soc. Photo-Optical Instr. Eng., 686 (1986) 18-25

Analytical Applications of Neutron Depth Profiling, Downing, R.G., Maki, J.T., and Fleming, R.F., J. Radioanal. Nucl. Chem. 112(1) (1986) 33-46

Application of Neutron Depth Profiling to Microelectronic Materials Processing, Downing, R.G., Maki, J.T., and Fleming, R.F., Book Chapter Symposium Series No. 295, American Chemical Society Press, Washington, D.C.; L.A. Casper, Ed. (1986) 163-180

Quantitative depth profiling of boron in glass with neutrons, Riley, J.E. and Downing, R.G., Pittsburgh Conference; Pittsburgh, PA (USA); 37. Pittsburgh conference and exposition on analytical chemistry and applied spectroscopy; Atlantic City, NJ (USA); 10-14 Mar 1986 (INIS Vol 18 Issue 08, Ref No. 18030563)


1985 Literature

High Resolution SIMS and Neutron Depth Profiling of B through Oxide-Silicon Interfaces, Vandervorst, W., Shepherd, F.R., and Downing, R.G., American Vacuum Science and Technology A3(3) (1985) 1318-1321

Depth Profiles of 35 keV 3He Ions in Metals, Lennard, W. N., Geissel, H., Alexander, T. K., Hill, R., Jackson, D. P., Lone, M. A., and Phillips, D. (1985). Nuclear Instruments and Methods B10-11, 592-595.

Properties of Ion‐Implanted Polycrystalline Si Layers Subjected to Rapid Thermal Annealing, S. R. Wilson, R. B. Gregory, W. M. Paulson, S. J. Krause, J. D. Gressett, A. H. Hamdi, F. D. McDaniel and R. G. Downing, J. Electrochem. Soc. (1985) volume 132, issue 4, 922-929

doi: 10.1149/1.2113986

Nitrogen Concentration Distributions by Neutron Depth Profiling, Maki, J. T., Downing, R. G., and Fleming, R. F., NBS Technical Note 1207, (1985) Pages 114-118

Deconvolution of Neutron Depth Profiling Spectra, Maki, J. T., Fleming, R. F., and Vincent, D. H., Nuclear Instruments and Methods B17, (1985) Pages147-155

Properties of Ion Implanted Polycrystalline Si Layers Subject to Rapid Thermal Annealing, Wilson, S. R., Gregory, R. B., Paulson, W. M., Krause, S.J., Gressett, J. D., Hamdi, A. H., McDaniel, F. D., Downing, R. G., Journal of the Electrochemical Society 132(4) pp. 922-929 (1985)