NDP References for 1979 - 1980

1980 Literature

D. Fink, J. P. Biersack, H. Grawe, J. Riederer, K. Müller, and R. Henkelmann, Applications of (n, p) and (n, α) reactions and a backscattering technique to fusion reactor materials, archeometry, and nuclear spectroscopy,"Nuclear Instruments and Methods, Volume 168, Issues 1-3, 1 January-15 January 1980, Pages 453-457

Myers, D. J., Halsey, W. G., King, J. S., and Vincent, D. H. (1980). He-3 Release from Copper. Radiation Effects 51, 251-252

Ryssel, H., Haberger, K., Hoffmann, K., Prinke, G., Dumcke, R., and Sachs, A. (1980). Simulation of Doping Processes. IEEE Transactions on Electron Devices IEEE Transactions on Electron Devices ED27(8), 1484-1492

Ryssel, H., Muller, K., Biersack, J. P., Kruger, W., Lang, G., and Jahnel, F. (1980). Range, and Range Straggling of Ion-Implanted Boron in CdO.2 HgO.8 Te. Physica Status Solidi 57, 619-624

Ryssel, H., Maller, K., Haberger, K., Henkelmann, R., and Jahnel, F. (1980). High Concentration Effects on Ion Implanted Boron in Silicon. Applied Physics 22, 35-38

Nagy, A. Z., Vasvari, B., Duwez, P., Bakos, L., BogAncs, J., and Nazarov, V. M. (1980). Variation of Boron Concentration in Metallic Glass Ribbons. Physica Status Solidi (a), 61, 689-692

Muller, K., Henkelmann, R., Jahnel, F., Ryssel, H., Haberger, K., Fink, D., and Biersack, J. (1980). The Application of (n,a) Method for Boron Depth Profiling, and Channel-Blocking Measurements in Semiconductor Materials. Nuclear Instruments and Methods 170, 151-155

1979 Literature

J. P. Biersack, D. Fink, R. A. Henkelmann, and K. Müller, "Range profiles and thermal release of helium implanted into various metals," Journal of Nuclear Materials, Volumes 85-86, Part 2, 2 December 1979, Pages 1165-1171

Bogancs, J., Szab6, A., Nagy, A. Z., Csoke, A., Pecznik, J., and Krakkai, I., Nondestructive Nuclear Method for Boron Analysis in Plant Samples, Radiochem. Radioanal. Lett. 39(6) (1979) pages 393-403

Bogancs, J., Gyulai, J., Hagy, A., Nazarov, V. M., Seres, Z., and Szabo, A. (1979). Use of the Reaction “B(n, a) 7Li to Determine the Distribution of Boron Implanted in Silicon,” Joint Institute for Nuclear Research 1, 59-64

R. F. Fleming, "Depth Profiling of He-3, Li-6 and B-10 Using a Thermal Neutron Beam," NBS Technical Note 1117, July 1978 to June 1979, pp. 150-154